منابع مشابه
Tunable Active Dual-Band Bandpass Filter Design Using MMIC Technology
Abstract— The inductor-less designing of monolithic tunable active dual-band bandpass filter is presented in this study. Biasing voltages signify main role. They can control the center frequency and quality factor. Using four biasing voltages and cascading two similar filters leads to dual-band bandpass filter. By keeping the gain constant, the center frequency shift is 200 MHz. Regardless cons...
متن کاملDesign of X Band High Power Amplifier MMIC Based on AlGaN/GaN HEMT
In this paper, we have presented an X band high power amplifier based on MMIC (Monolithic Microwave Integrated Circuit) technology for satellite remote sensing systems. We have used GaN HEMT process with 500 nm gate length technology with VD= 40 V and VG= -2 V in class E structure. The proposed two-stage power amplifier provides 25 dB power gain with maximum output power of 49.3 dBm at 10 GHz. ...
متن کاملPerformance of GaAs MESFET Mixers at X Band
A theoretical analysis and experimental verification of the signal properties of the GaAs MESFET mixer are presented. Experimental techniques for evaluating some of the mixer parameters are described. Experiments performed on GaAs MESFET mixers at X band show that good noise performance and large dynamic range can be achieved with conversion gain. A conversion gain over 6 dB is measured at 7.8 ...
متن کاملX-Band 5-bit MMIC Digital Attenuator with Low Phase Shift
This paper presents the x-band 5-bit MMIC digital attenuator with low phase shift. Phase compensation techniques were used in the MMIC design to reduce the phase shift. This attenuator is fabricated with 0.2μm GaAs PHEMT process. Measurement results of the developed MMIC chips in the xband show that the 5-bit MMIC digital attenuator has 0.5dB resolution and 15.5dB dynamic attenuation range, inp...
متن کاملAn X-band RFIC Active Phase Shifter
An active RFIC X-band phase shifter is implemented using IHP SiGe HBT 0.25 μm SGB25V technology with an improved vector sum method. The chip is formed by a three way Wilkinson power divider, three phase delays for 0-120-240 degrees, three similar RFIC LNAs and a final three way Wilkinson power combiner on the same chip and occupies an area of 4x1.8 mm2. The circuit provides both phase and ampli...
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ژورنال
عنوان ژورنال: Active and Passive Electronic Components
سال: 2002
ISSN: 0882-7516,1563-5031
DOI: 10.1080/08827510211277